Correlation Of I-V Curve Parameters With Module-Level Electroluminescent Image Data Over 3000 Hours Damp-Heat Exposure

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)(2017)

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摘要
Four module brands of three samples each were exposed to 3000 hours of accelerated damp-heat testing. Current voltage (I-V) curve tracing and electroluminescent (EL) imaging were performed at 500 hour steps. The I-V curves were analyzed to get 8 common I-V parameters: maximum power (P-mp), fill factor (FF), current at maximum power (I-mp), voltage at maximum power (V-mp), current at short circuit (I-sc), voltage at open circuit (V-oc), series resistance (R-s), and shunt resistance (R-sh). The EL images were processed with a data processing pipeline using the open source coding language Python, employing techniques such as filtering, thresholding, convex Hull, regression fitting, and perspective transformation. This pre-processing was necessary to re-orient the images in a uniform manner as there was variance involved in the alignment of the modules during the measurement process. With the pre-processed data in hand, module-level parameters of median, mean, and standard deviation were calculated from the image pixel intensity distributions. These image data parameters were plotted against all the I-V curve parameters to identify trends in these data types. Correlation heat maps were generated depicting the relationships between data type parameters from IV and EL measurements.
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关键词
I-V, electroluminescent imaging, accelerated exposure, degradation
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