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Radiation Resistance of Low Cost High Efficiency Triple Junction Solar Cells

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)(2017)

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摘要
Low Cost solar cells based on the high efficiency structure InGaP/GaAs/Ge have been manufactured and verified for space application. These solar cells are characterized by a AM0 BOL efficiency of 28% and very high radiation resistance to proton and electron irradiation thanks to their simplified structure. These features make them really appealing for the new market of mega constellation of minisatellites. In this paper the results of the electron and proton irradiation campaign in the energies range from 0.5 MeV to 10 MeV are reported and compared with standard CTJ30 solar cells.
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关键词
Photovoltaic cells,III-V semiconductor materials
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