Progress Towards Double-Junction InGaN Solar Cell

In this work we study the carrier population dynamics in an AlGaAs p-i-n single junction solar cell with 10 layers of InAs quantum dots (QDs) in the i-region. Light management and band engineering technics were used to optimize intermediate band solar cells (IBSCs) operation. The IBSC operations are investigated through quantitative luminescence based characterization methods based on photoluminescence spectra recorded in absolute values and two-color excitation. The results show that the sample is compatible with the IBSC operations at room temperature.