Low temperature antireflection coating for silicon solar cells

For potential reduction in the economical budget of silicon solar cells requires the low temperature manufacturing process. Normally, at industrial level dielectric materials such as SiO ₂ , Al ₂ O ₃ and a-SiNx:H used for passivation as well as antireflection coating. These materials requires higher process temperatures in the range of 200-900°c. Here, in this paper, we have discussed a simple method for the room temperature epoxy antireflection coating for the AL-BSF silicon solar cells. It is found that both open circuit voltage (Voc) and short circuit current (Isc) is increased after applying the coating on the solar cell. Further, comparison is made between the standard antireflection a:SiNx coatings and epoxy coating.