Evaluation of Ald Passivation Layers for Industrial Perc Process

The passivation quality of batch type thermal atomic layer deposition (ALD) is investigated in the industrial production line. The surface morphology, reflectance, and carrier lifetime of samples are measured and analyzed based on the deposited Al 2 O 3 film and SiN x capping layer thickness. Front layer control with SiN x /SiON layers further boosts the level of passivation. Our results show thin (~5nm) layer of Al 2 O 3 on both side of wafer could potentially improve the Passivated Emitter and Rear Cell (PERC) performance.