Halide Vapor Phase Epitaxy Of In2o3 And (In1-Xgax)(2)O-3 On Sapphire Substrates And Gan/Al2o3 Templates

The growth of cubic and rhombohedral In2O3 and (InGa)(2)O-3 epitaxial films by halide vapor phase epitaxy (HVPE) is reported. The deposition is carried out at 625 degrees C using indium trichloride (InCl3), gallium monochloride (GaCl), and O-2 precursors on (0001) sapphire substrates, HVPE-grown Ga2O3/Al2O3 and metal-organic chemical vapor deposition (MOCVD)-grown GaN/Al2O3 templates. The HVPE growth of phase pure In2O3 and (InGa)(2)O-3 with corundum structure is reported for the first time.