Computational Lithography & Inspection (Cli) And Its Applications In Mask Inspection, Metrology, Review, And Repair

PHOTOMASK TECHNOLOGY 2010(2010)

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摘要
At the most advanced technology nodes, such as 32nm, 22nm, and beyond, aggressive OPC and Sub-Resolution Assist Features (SRAFs) on the mask are essential for accurate on-wafer imaging; mask patterns generated by Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) may also be necessary for production. However, their use results in significantly increased mask complexity, making mask defect disposition more challenging than ever. Computational Lithography and Inspection (CLI) have broad applications in mask inspection, metrology, review, and repair, and provide additional information to assist the operator in making accurate and efficient decisions on defect disposition. In this paper these applications of CLI in mask inspection, off-line review, metrology, and repair are presented and discussed.
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关键词
Computation lithography,computational inspection,mask inspection,mask metrology,mask repair,mask pattern recovery,mask defect disposition
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