The Infn R&D: New Pixel Detector For The High Luminosity Upgrade Of The Lhc

The high Luminosity upgrade of the CERN-LHC (TIL-LHC) demands for a new high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10(16) particles/cm(2) at similar to 3 cm from the interaction point. To this extent the TNFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler-FBK, is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct \Vafer Bonding technique, which allows for the production of sensors with 100 mu m and 130 mu m active thickness for planar sensors, and 130 mu m for 3D sensors, the thinnest ones ever produced so far. The first prototypes of hybrid modules bump-bonded to the present CMS and ATLAS readout chips have been tested in beam tests. The preliminary results on their performance before and after irradiation are presented.