The impact of the dislocation distribution and dislocation type on the charge carrier lifetime in Czochralski germanium single crystals

•Ge crystals were grown in [211] and [110] direction by the Czochralski technique•Wet-chemical etching experiments of wafers revealed dislocation sources on surface•The etch pit morphology is similar for 60°- and screw-type dislocations•The charge carrier lifetime >600 μs is obtained in low dislocation density regions•The carrier lifetime decreases significantly at a dislocation density >2 × 104 cm−2