The optimization of InGaAs/InGaP quantum wells grown by gas source molecular beam epitaxy

We report on the great improvement of optical properties of a InGaAs quantum well structure by inserting ultra thin GaAs layers between the InGaAs well and the InGaP barrier grown by molecular beam epitaxy. The room temperature photoluminescence from the quantum well structure with insertion of 3 monolayers GaAs shows 1.5 times enhancement in peak intensity, as well as a drastic reduction of peak linewidth from 46 nm to 30 nm. The dependence of the quantum well optical properties has been investigated with inserted GaAs thickness in the range of 0-12 MLs, and optimized GaAs thickness has been obtained. This methodology might be beneficial for growth of high quality quantum well optical devices.