Transferable Ingan Quantum Well Grown At Low Temperature On Amorphous Substrates By Plasma-Assisted Molecular Beam Epitaxy

Low-temperature growth of III-nitride semiconductors on non-single-crystalline substrates is a promising solution to realize GaN-based transferable and flexible devices on a large scale. For this purpose, this work reports the growth and the optical properties of InGaN quantum wells (QWs) on graphene/quartz substrates using low-temperature (below 530 degrees C) plasma-assisted molecular beam epitaxy. An internal quantum efficiency (IQE) as high as 15.5% is achieved for the as-grown blue-light InGaN QW. Furthermore, the weak van der Waals interaction between the graphene sheet and nitride film results in successful release and transfer of the InGaN QW film by using a thermal-release tape, with an improved IQE due to the release of the residual stress in the epilayer. The results presented in this work offer insights and guidance for the release and transfer of III-nitride films to large-area, flexible, and cost-efficient host substrates.