Interface Roughness Governed Negative Magnetoresistances In Two-Dimensional Electron Gases In Algan/Gan Heterostructures

Negative magnetoresistances (NMRs) have been widely observed in two-dimensional electron gases (2DEGs). However, their origins are under debate. Here, we report on NMRs in the 2DEG in AlGaN/GaN heterostructures, aiming to uncover their origins by utilizing electric field gating. We systematically measured the magnetoresistances in magnetic fields up to 12 T and at temperatures between 3 and 260 K and observed NMRs over a wide range of temperatures from 3 to 170 K, which become more pronounced with decreasing temperature. We conducted electric field gating experiments to correlate the occurrence of NMRs with the relationship between electron mobility and density. The latter is governed by defect scattering sources in the sample and can be theoretically modeled. Comparison of the measured electron mobility and electron density relationship with theory reveals that interface roughness scattering plays a crucial role in obtaining large NMRs. Our work demonstrates that electric field gating provides a means not only to tune the values of NMRs but also to uncover their mechanisms.