On-Wafer, Large-Signal Transistor Characterization from 70-110 GHz Using an Optimized Load-Pull Technique

The ability to benchmark the performance of semiconductor technologies using small periphery devices, quickly and accurately, can reduce development cost and expedite time to market. This can now be achieved using hybrid-active vector receiver load-pull measurements that enable E- and W-Band device characterization up to gamma magnitudes of 1 at the device-under-test (DUI) reference plane.