Modeling, Design, and Evaluation of Active $\mathrm{\text{} d }v/\mathrm{\text{} d }t$ Balancing for Series-Connected SiC MOSFETs

Keyao Sun,Emma Raszmann,Jun Wang,Xiang Lin,Rolando Burgos,Dong Dong,Dushan Boroyevich

IEEE Transactions on Power Electronics（2022）

引用 12|浏览16

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摘要

Series connection of SiC MOSFET s provides an effective alternative to achieving higher blocking voltage with simpler circuit topologies. However, the voltage imbalance during the switching transient remains a critical issue. Recently, an active

$\mathrm{\text{} d }v/\mathrm{\text{} d }t$

control approach utilizing a controllable equivalent Miller capacitor has been proved to be an effective, low-loss, and compact solution. This article renders an improved control circuit with comprehensive modeling and analysis. First, the original circuit is modified with an additional bipolar-junction-transistor and pulsed control signal so that the external capacitor can be fully reset every switching cycle. Second, a simplified model of the active

$\mathrm{\text{} d }v/\mathrm{\text{} d }t$

control is derived to unveil the linear correlation between the control voltage and the device

$\mathrm{\text{} d }v/\mathrm{\text{} d }t$

during the turn- off transient. Third, a feedback control model is described by difference equations for stability analysis, offering parameter selection guidelines for the control process. Fourth, experimental results with two series-connected SiC MOSFET s under 1.5-kV dc-link voltage are demonstrated to validate the open-loop control model and closed-loop stability. Finally, the control method is expanded to eight series-connected devices under 6 kV to prove its scalability and potential for medium-voltage high-current applications.

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关键词

Active $\mathrm{\text{} d }v/\mathrm{\text{} d }t$ control,series connection,silicon carbide (SiC) MOSFET

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