Charge–Sensing method for Nickel contamination detection on a 4H-SiC PowerMOSFET
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)(2021)
摘要
Process induced contamination became a key point in the recent years to focus the yield improvement on 4H-SiC PowerMOSFET in the production lines. It has been demonstrated that metallic contamination could compromising irreparably transistor performances and reliability. Moreover, the threshold instability is addressed to SiC/SiO2 interface or gate oxide issues. In this work a new method based on ...
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关键词
Process control,Production,Logic gates,Nickel,Dielectrics,Sensors,Transistors
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