Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

Under a self-heating stress (SHS), amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) would exhibit a severe hump in the transfer characteristics. A model based on state transformation of oxygen vacancies is proposed to explain this phenomenon. The channel region of TFT is considerably self-heated if a large current flows through due to the poor thermal conductivity of a-IGZO. The temperature...