Tunability Properties and Compact Modeling of HfO 2 -Based Complementary Resistive Switches Using a Three-Terminal Subcircuit

M. Saludes-Tapia,S. Poblador,M. B. Gonzalez,F. Campabadal,J. Suñe,E. Miranda

IEEE Transactions on Electron Devices（2021）

引用 5|浏览9

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摘要

Complementary resistive switching (CRS) arises when two bipolar-mode memristive devices are antiserially connected, forming a single functional structure. The combined effect of both memristors leads to the appearance of high (HRS) and low (LRS) resistance windows in the current–voltage ( ${I}$ – 更多

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关键词

Electrodes,Resistance,Hafnium oxide,Performance evaluation,Mathematical models,Switches,Memristors

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