Study of aging time effect on the EMI evolution of power RF LDMOS transistor in DC-DC buck converter circuit
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)（2021）
摘要
Recent studies have shown that the aging time effect on power RF LDMOS transistor may modify electromagnetic emission significantly. It is even rarer to use of RF LDMOS (Radio Frequency Lateral Diffused Metal–Oxide–Semiconductor) devices in a power application. This paper reports on an experiment that prove to elucidate the origins of level changes in the Electro-Magnetic Interference (EMI) in DCD...
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关键词
Electro-Magnetic interference,power MOSFET,accelerated ageing tests,hot carrier effects,Rise time,fall time
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