Thermal effect on performance of N-MOSFET transistor under pulsed RF tests
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)（2021）
摘要
This is a study of thermal effects on performance of N-channel power RF LDMOS devices, under reliability bench of pulsed RF life test in a radar application from 10° C to 150° C. The behaviour of semiconductor is delicate to temperature variation, especially power RF devices, that can partially or total change the performances of physical and electrical device. The temperature evolution during the...
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关键词
performance,power RF N-LDMOS,temperature,thermal effect,radar application
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