CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Sachin Yadav,Pieter Cardinael,Ming Zhao,Komal Vondkar,Uthayasankaran Peralagu,Alireza Alian,Ahmad Khaled,Sergej Makovejev,Enrique Ekoga,Dimitri Lederer,Jean-Pierre Raskin,Bertrand Parvais,Nadine Collaert

2021 International Conference on IC Design and Technology (ICICDT)（2021）

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摘要

GaN-on-Si HEMTs are one of the leading technology options for 5G and beyond frond-end-modules. Substrate RF losses and harmonic distortion degrade performance of both active as well as passive devices for power amplifier and switch applications. In this paper, we report on the substrate RF loss and linearity performance of GaN-on-Si technology. It is shown that coplanar waveguides on GaN-on-high r...

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关键词

GaN HEMTs on Si,Substrate RF losses,Harmonic distortion

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