Robust GaN-Based LNAs With Active Epitaxial Current Limiters

In this letter, the current limiters fabricated by the gallium nitride (GaN) active epitaxial layers are introduced to achieve GaN-based robust low-noise amplifiers (LNAs). In principle, by taking advantage of the current saturation effect, the gate dc current which causes gate degradation or breakdown can be controlled below the breakdown limit at any input level. The active current limiter can a...