Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition.Jian Liu,Ke Wang,Xiaolong Zhou,Xiaopeng Xiao,Yongming Tang,Zhongyuan Ma,Kunji ChenASICON(2021)引用 1|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要