Reliable method for low field temperature dependent mobility extraction at Al 2 O 3 /GaN interface

B. Rrustemi, A. G. Viey, M.-A. Jaud, F. Triozon, W. Vandendaele,C. Leroux, J. Cluzel,S. Martin,C. Le Royer, R. Gwoziecki, R. Modica,F. Iucolano, F. Gaillard,T. Poiroux,G. Ghibaudo

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)（2021）

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摘要

Accurate split-CV mobility measurements require to overcome Bias Temperature Instabilities (BTI) which are a key issue in GaN-on-Si MOS-channel HEMTs (MOSc-HEMT). In this article, a rigorous methodology to extract the split-CV mobility as a function of the electron density and the temperature at Al2O3/GaN MOS interface is depicted. Drain current In(VG) and gate-to-channel cap...

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关键词

Temperature measurement,Temperature distribution,Temperature dependence,Voltage measurement,Current measurement,Scattering,Logic gates

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