Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties

ADVANCED SCIENCE(2022)

引用 3|浏览11
暂无评分
摘要
PtSe2 is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.
更多
查看译文
关键词
density-functional theory, piezoresistive sensors, PtSe2, Raman characterization, stacking disorder, two-dimensional materials
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要