SiC p+n Junction Diodes Toward Beam Monitor Applications

Tetsuichi Kishishita,Ryoji Kosugi,Yowichi Fujita,Yoshinori Fukao,Kazutoshi Kojima,Keiko Masumoto, Hajime Nishiguchi, Manobu M. Tanaka,Yasunori Tanaka

IEEE Transactions on Nuclear Science（2021）

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摘要

We report on silicon carbide (SiC) p-n junction diodes with a high blocking voltage over 3 kV. Although SiC radiation sensors have been developed with a Schottky barrier type due to a simple fabrication process in the early stages, p-n junction structures are advantageous due to lower sensitivity of the surface defects. Thus, this system provides an ideal condition to investigate the effect of bul...

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关键词

Silicon carbide,Leakage currents,Sensors,Schottky diodes,Temperature measurement,Neutrons,Detectors

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