Performance Analysis of a Double-Gate Junctionless Transistor with Varied Doping and Gate Underlap using Device Simulator

Nurul Nasirah Afiqah Nasir,Noraini Othman,Syarifah Norfaezah Sabki,Alhan Farhanah Abd Rahim

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)（2021）

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摘要

In this work, the impact of doping concentrations and gate underlap towards the electrical performance of a double-gate junctionless transistor (DG-JLT) were investigated using three-dimensional device simulator. The results show that the parameter of doping concentrations (Nd) has a greater impact towards the electrical performance of the transistor as compared to the gate underlap len...

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关键词

Performance evaluation,Doping,Logic gates,Electric variables,Sensors,Performance analysis,Transistors

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