Packaged $\beta$ -Ga 2 O 3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

Florian Wilhelmi,Shinji Kunori,Kohei Sasaki,Akito Kuramata,Yuji Komatsu,Andreas Lindemann

IEEE Transactions on Power Electronics（2022）

引用 9|浏览7

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摘要

Recently, gallium oxide (Ga$_2$O$_3$) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furth...

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关键词

Junctions,Schottky diodes,Gallium,Temperature,Silicon carbide,Schottky barriers,Voltage

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