Systematic Analysis and Characterization of Extreme Failure for IGCT in MMC-HVdc System—Part II: Failure Mechanism and Short Circuit Characteristics

IEEE Transactions on Power Electronics(2022)

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摘要
Short circuit failure mode (SCFM) of integrated gate commutated thyristor (IGCT) under extreme failure is of vital importance in high voltage direct current power transmission based on modular multilevel converter technology. Due to the sealing housing package of IGCT, the short circuit mechanism is hard to be clarified. Considering this limitation, the current density changes in IGCT with differe...
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关键词
Cathodes,Logic gates,Surges,Current density,Reliability,Integrated circuit reliability,Insulated gate bipolar transistors
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