Effects of SiO₂ layer on the performance of a LNOI Acoustic Wave Resonator

Acoustic Wave resonators based on thin-film LiNbO3 piezoelectric layer have gained a lot of interest due the high intrinsic electromechanical coupling constant for a SH0 in a 30 degrees YX cut. LiNbO3-on-insulator (LNOI) structures allow to manufacture AW resonators with good performance using simple fabrication process. In this work, the 3D simulation of LNOI structures is presented with the aim to analyze the effect of the SiO2 layer on the performance of the resonator. Several LNOI resonators have been fabricated which validates previous analysis.