Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming

Jong-Heon Yang,Chun-Won Byun,Jae-Eun Pi,Hee-Ok Kim,Chi-Sun Hwang,Seunghyup Yoo

IEEE Transactions on Electron Devices（2022）

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摘要

In this study, we present programming speed enhancement in amorphous oxide semiconductor memory thin-film transistor (TFT). We developed a nonvolatile memory transistor based on InZnSnO back-channel-etch TFT with InGaZnO charge storage layer inserted between gate insulators. We proposed double-gate (DG) and body-contacted (BC) memory structure to improve memory erase speed, which is the most impor...

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关键词

Thin film transistors,Logic gates,Insulators,Nonvolatile memory,Transistors,Programming,Electrodes

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