P+ Base Doping Optimization of 6-in Gate Commutated Thyristors for Hybrid DC Circuit Breaker Application

Wenpeng Zhou,Zhanqing Yu,Zhengyu Chen,Jinpeng Wu,Biao Zhao,Rong Zeng

IEEE Transactions on Electron Devices（2022）

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摘要

The 6-in gate commutated thyristor (GCT) is suitable for hybrid dc circuit breaker (HDCB) application with its large chip area and high maximum controllable current (MCC), compared with traditional 4-in GCTs. P+ base doping dispersion control is of vital importance in the 6-in GCT chip. Based on the strong correlation between P+ base doping and the gate-cathode breakdown voltage ( ...

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关键词

Doping,Dispersion,Logic gates,Optimization,Etching,Thyristors,Process control

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