In-MRAM Computing Elements with Single-Step Convolution and Fully Connected for BNN/TNN

In-memory computing shows great energy-efficient attraction in non-von Neumann architecture. Computing in spin-transfer-torque magnetic RAM (STT-MRAM) is expected to achieve both ultra-low-power and interconnection delay reduction. In this work, a 4T2M MRAM bit-cell and associated peripheral circuits are proposed, which can perform XNOR operation and ternary operation extension in-memory. At the s...