Comparing Hexagonal and Circular Cell designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)(2021)

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摘要
In this work, the avalanche ruggedness of 1200V /2A SiC MPS diodes with hexagonal and circular cells are studied through experiment, modeling analysis, and 3D- TCAD simulation. The experimental result demonstrated that the avalanche energy/current capability of the circular cell-designed MPS diode (MPS-B) exhibit higher than the hexagonal cell-designed one (MPS-A). Further analysis and simulation ...
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关键词
Analytical models,Silicon carbide,Simulation,Asia,Proximity effects,Switches,Reliability engineering
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