Effects of Structural Variation for Improved Performance of a Vertical AlGaN/GaN Superjunction HEMT

A GaN-based vertical superjunction high electron mobility transistor (HEMT) is analyzed theoretically to improve specific on-resistance $(\mathrm{R}_{\text{on}})$ and breakdown voltage (BV). The Drain is vertically aligned with the Source and Gate in a vertical superjunction HEMT, where the width is divided into two pillars, p and n. Each of these pillars is referred to as a half pillar. The devic...