TCAD simulation of charge collection properties of an active edge planar p-on-n sensor for FEL applications

Mohamed El Amine Benkechkache,Gian-Franco Dalla Betta,Lucio Pancheri,Saida Latreche,Lamis Ghoualmi

2021 Fourth International Conference on Microelectronics, Signals & Systems (ICMSS)（2021）

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摘要

Research at the European XFEL (X-ray Free Elec-tron Laser) needs radiation hard silicon sensors able to withstand high doses that can reach 1 GGy 12 keV x-ray radiation. To this purpose, in the aim of designing a dedicated imaging instrumentation that could cope with the tight FEL application requirements, specially regarding charge collection speed, radiation tolerance and spatial resolution, thi...

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关键词

Active edge,Charge Collection properties,FELs,X-ray detectors,TCAD simulation

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