Polar Code and Symbol Mapping Design for Multi-Level Cell Spin-Torque Transfer Magnetic Random Access Memory

Multi-level-cell (MLC) spin-torque transfer magnetic random access memory (STT-MRAM) suffers from reliability issues due to the highly asymmetric error rates of its hard and soft domains. In this communication, we have proposed to include a symbol mapper prior to writing bits to the MRAM and have jointly optimized the mapping and polar codes with iterative, soft-cancellation (SCAN) decoder. Specif...