Nitrogen-Passivated (010) In 0.53 Ga 0.47 As FinFETs With High Peak g m and Reduced Leakage Current

Hua-Lun Ko,Quang Ho Luc,Ping Huang,Si-Meng Chen,Jing-Yuan Wu,Che-Wei Hsu,Nhan-Ai Tran,Edward Yi Chang

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance, ${g}_{m}$ , of 2727 $\mu \text{S}/\mu \text{m}$ which is among the highest v...

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关键词

FinFETs,Logic gates,Shape,Leakage currents,Plasmas,Nitrogen,Indium gallium arsenide

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