SiGe HBTs with f_T/f_MAX 375/510GHz Integrated in 45nm PDSOI CMOS

A 45nm BiCMOS process, based on PDSOI CMOS, with SiGe HBT NPNs having f(T)/f(MAX) = 375/510GHz is presented. The bipolars are integrated on a PDSOI wafer in an epitaxial region above the handle wafer to avoid self-heating concerns. To our knowledge, this is the first time a high performance SiGe BiCMOS process has been demonstrated on a PDSOI wafer. In addition to the HBTs, the technology features high performance NFETs with f(T)/f(MAX) = 265/330GHz and PFETs with f(T)/f(MAX) = 250/340GHz enabling flexibility in circuit design. A full-flow demonstration PDK, digital standard cell and 10 cell libraries have been released for experimental circuit design work. This work, funded under the DARPA T-MUSIC program, will address future extensions to higher HBT performance and more-advanced CMOS nodes.