Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)(2021)
摘要
This paper reports frequency performance improvements in Superlattice Castellated Field Effect Transistor (SLCFET) amplifier through device scaling. Device scaling incorporates the variations in castellation ridge width, castellation trench width, castellation length, gate stem length, gate hat length, gate offset, gate dielectric thickness, and passivation thickness. Highest ${f_{T}}$ ...
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关键词
Performance evaluation,Resistance,Radio frequency,Degradation,Flip chip solder joints,Logic gates,Dielectrics
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