Growth of Ba₂NaNb₅O₁₅Thin Films on MgO(100) by the Pulsed Laser Ablation Method

Ba2NaNb5O15 (BNN) thin films were grown on MgO(100) by the pulsed laser ablation method using BNN ceramic targets. The characterization of the thin films was carried out by X-ray diffraction, a scanning electron microscope and an electron probe micro analyzer. The chemical composition of BNN thin films approached the BNN stoichiometry and improved with increasing O2 gas pressure. We obtained the BNN single phase thin films with strong c-axis orientation and nearly stoichiometoric composition deposited on MgO(100) at the laser energy density of 5.0 J/cm2, the substrate temperature of 600°C and the O2 gas pressure of 0.3 Torr.