Phase edge lithography for sub 0.1 μm electrical channel length in a 200 mm full CMOS process P. Agnello,T. Newman, E. Crabbe,S. Subbanna, E. Ganin,L. Liebmann, J. Comfort, D. Sunderland1995 Symposium on VLSI Technology. Digest of Technical Papers引用 2|浏览0暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
