A 256 Kbit (32kx8) EEPROM for >200°C Applications

Dennis Adams, Jeff Black,Garry Cunningham,Randall Lewis, Jason O'Brien,Bill Hand, Greg Marsh, Ian Manwaring, Donald Pierce,Cory Sherman, Sze Wong

Additional conferences (Device packaging, HiTEC, HiTEN, & CICMT)（2014）

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摘要

A memory retention study was performed on the W28C256 256k (32kx8) EEPROM device to assess its suitability for use in high temperature applications above 200°C. This study indicates this device has memory retention in excess of 5 years at 225°C. During 2014, characterization and extended life testing is planned to further assess device reliability for future high temperature applications.

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