InAs FinFETs With Hfinnm Fabricated Using a Top–Down Etch ProcessR. Oxland, X. Li,S. W. Chang,S. W. Wang,T. Vasen,P. Ramvall,R. Contreras-Guerrero,J. Rojas-Ramirez,M. Holland,G. Doornbos,Y. S. Chang,D. S. Macintyre,S. Thoms,R. Droopad,Y.-C. Yeo,C. H. Diaz,I. G. Thayne,M. PasslackIEEE Electron Device Letters(2016)引用 21|浏览7暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要