P‐195: Late‐News Poster: Indium Gallium Zinc Oxide Phototransistor for Visible Light Detection Using Hydrogen Plasma Doping

We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a‐IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen‐incorporated a‐IGZO (a‐IGZO:H). The absorption layer could absorb visible light due to increase in sub‐gap states via hydrogen plasma doping. As a result, a‐IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98x106, and 5.81x1011 Jones of detectivity under green light (532 nm, 5mW).