Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs

Qing Lin,Gregory Pitner,Carlo Gilardi,Sheng-Kai Su,Zichen Zhang,Edward Chen,Prabhakar Bandaru,Andrew Kummel,Han Wang,Matthias Passlack,Subhasish Mitra,H.-S. Philip Wong

IEEE Electron Device Letters（2022）

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摘要

Carbon nanotube (CNT) transistors exemplify the fundamental tradeoff between desirable high mobility and undesirable leakage current due to the small effective mass and bandgap. To understand leakage current limits in high-speed CNT transistors, electrical bandgaps are extracted on 12 single-CNT top-gate MOSFETs from the energy gap between thermionic emission and band-to-band tunneling (BTBT) at 1...

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关键词

Photonic band gap,MOSFET,Logic gates,Tunneling,Data mining,Leakage currents,Carbon nanotubes

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