AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlNAndrew M. Armstrong,Brianna A. Klein,Albert G. Baca,Andrew A. Allerman,Erica A. Douglas,Albert Colon,Vincent M. Abate,Torben R. FortuneApplied Physics Letters(2019)引用 22|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要