10-Steps Method to Extract the I-V Curve of Resonant Tunneling Diode Based on Experimental Data Preserving Physical Parameters

In this paper we establish a methodology for obtaining the I-V characteristic of fabricated and characterized resonant tunneling diodes (RTDs) based on experimental data available in the literature. In addition, a scaling factor is proposed, in order to taking account the reduction in the dimensionality between the reservoir and the active region. Hence, the proposed method allows preserving the physical meaning of the major parameters used in the theoretical model developed by Schulman et al. [1], while providing an acceptable fitting, at least, for the negative differential resistance (NDR) behavior of the I-V curve. The validation of the methodology is obtain by satisfactorily contrasting the simulated curve with the experimental data presented in Schulman et al. [1], for a RTD of the In\(_{0.53}\)Ga\(_{0.47}\)As/AlAs system. Finally, we extend the model proposed for another two RTDs of the GaAs/AlAs system manufactured and characterized by Yang et al. [2] and Alkeev et al. [3]. The simulated results show good agreement regarding experimental peak and valley currents, peak and valley voltages and peak-to-valley ratio (PVR), with a minimum concordance of 94.5\(\%\). Thus, this method can be use in the design of RTD, aiming its application in oscillator circuits.