Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacksTakuma Doi,Shigehisa Shibayama,Wakana Takeuchi,Mitsuo Sakashita,Noriyuki Taoka,Mitsuaki Shimizu,Osamu NakatsukaApplied Physics Letters(2020)引用 2|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要