Study of current-voltage characteristics of InAsSb-based LED heterostructures in 4.2 - 300 K temperature range

Journal of Physics: Conference Series(2020)

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摘要
Abstract Current-voltage characteristics of light-emitting diode heterostructures based on InAsSb epitaxial films and a multi quantum-well structure were studied in the temperature range T = 4.2–300 K. It is shown that transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K. The tunnelling effect appears in the temperature range 4.2–77 K. The presence of quantum wells in the active layer results in increased diode leakage currents due to tunnelling.
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