MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Benjian Liu,Te Bi,Yu Fu,Ken Kudara,Shoichiro Imanishi,Kang Liu,Bing Dai,Jiaqi Zhu,Hiroshi Kawarada

IEEE Transactions on Electron Devices（2022）

引用 18|浏览11

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摘要

Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C–H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. ...

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关键词

Diamond,Field effect transistors,Two dimensional hole gas,MOSFET,Logic gates,Substrates,Metals

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